Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy
Identifieur interne : 002228 ( Main/Repository ); précédent : 002227; suivant : 002229Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy
Auteurs : RBID : Pascal:11-0330601Descripteurs français
- Pascal (Inist)
- Anneau quantique, Epitaxie gouttelette, Autoassemblage, Nanostructure, Epitaxie jet moléculaire, Gouttelette, Profil profondeur, Relaxation contrainte, Propriété mécanique, Cristallisation, Direction cristallographique, Morphologie surface, Microscopie force atomique, Semiconducteur III-V, Arséniure d'indium, Arséniure de gallium, Substrat GaAs, InxGa1-xAs, InGaAs, 8116D, 6865, 8107, 8115H.
English descriptors
- KwdEn :
- Atomic force microscopy, Crystallization, Crystallographic direction, Depth profiles, Droplet epitaxy, Droplets, Gallium arsenides, III-V semiconductors, Indium arsenides, Mechanical properties, Molecular beam epitaxy, Nanostructures, Quantum ring, Self-assembly, Stress relaxation, Surface morphology.
Abstract
The fabrication of self-assembled InxGa1-xAs nanostructures on GaAs(0 0 1 ) substrates grown by droplet epitaxy using molecular beam epitaxy is reported. The effect of In contents (0≤x≤0.2) for InxGa1-x droplets on their shape, dimension, density, and depth profile was investigated. The concentric quantum double rings (CQDRs) are transformed into quantum rings (QRs) with squarelike nanoholes when In content is increased. The transformation mechanism is explained by the strain relaxation arguments. As In content increases, crystallization can occur not only from the outer periphery, but also from the inner periphery of the rings. This is confirmed by decrease in outer dimension and change in the hole profile along the [1 -10] direction. In addition, low density QRs with shallow nanoholes were found on the surface for In content of 0.2. The surface morphology of InxCa1-xAs nanostructures was examined by atomic force microscopy (AFM).
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy</title><author><name sortKey="Boonpeng, P" uniqKey="Boonpeng P">P. Boonpeng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Jevasuwan, W" uniqKey="Jevasuwan W">W. Jevasuwan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Nuntawong, N" uniqKey="Nuntawong N">N. Nuntawong</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong Luang</s1><s2>Pathumthani 12120</s2><s3>THA</s3><sZ>3 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Pathumthani 12120</wicri:noRegion></affiliation></author><author><name sortKey="Thainoi, S" uniqKey="Thainoi S">S. Thainoi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Panyakeow, S" uniqKey="Panyakeow S">S. Panyakeow</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author><author><name sortKey="Ratanathammaphan, S" uniqKey="Ratanathammaphan S">S. Ratanathammaphan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Thaïlande</country><wicri:noRegion>Bangkok 10330</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0330601</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0330601 INIST</idno><idno type="RBID">Pascal:11-0330601</idno><idno type="wicri:Area/Main/Corpus">002D60</idno><idno type="wicri:Area/Main/Repository">002228</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Crystallization</term><term>Crystallographic direction</term><term>Depth profiles</term><term>Droplet epitaxy</term><term>Droplets</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Mechanical properties</term><term>Molecular beam epitaxy</term><term>Nanostructures</term><term>Quantum ring</term><term>Self-assembly</term><term>Stress relaxation</term><term>Surface morphology</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Anneau quantique</term><term>Epitaxie gouttelette</term><term>Autoassemblage</term><term>Nanostructure</term><term>Epitaxie jet moléculaire</term><term>Gouttelette</term><term>Profil profondeur</term><term>Relaxation contrainte</term><term>Propriété mécanique</term><term>Cristallisation</term><term>Direction cristallographique</term><term>Morphologie surface</term><term>Microscopie force atomique</term><term>Semiconducteur III-V</term><term>Arséniure d'indium</term><term>Arséniure de gallium</term><term>Substrat GaAs</term><term>InxGa1-xAs</term><term>InGaAs</term><term>8116D</term><term>6865</term><term>8107</term><term>8115H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The fabrication of self-assembled In<sub>x</sub>Ga<sub>1-x</sub>As nanostructures on GaAs(0 0 1 ) substrates grown by droplet epitaxy using molecular beam epitaxy is reported. The effect of In contents (0≤x≤0.2) for In<sub>x</sub>Ga<sub>1-x</sub> droplets on their shape, dimension, density, and depth profile was investigated. The concentric quantum double rings (CQDRs) are transformed into quantum rings (QRs) with squarelike nanoholes when In content is increased. The transformation mechanism is explained by the strain relaxation arguments. As In content increases, crystallization can occur not only from the outer periphery, but also from the inner periphery of the rings. This is confirmed by decrease in outer dimension and change in the hole profile along the [1 -10] direction. In addition, low density QRs with shallow nanoholes were found on the surface for In content of 0.2. The surface morphology of In<sub>x</sub>Ca<sub>1-x</sub>As nanostructures was examined by atomic force microscopy (AFM).</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>323</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Transformation of concentric quantum double rings to single quantum rings with squarelike nanoholes on GaAs(0 0 1) by droplet epitaxy</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1></fA09><fA11 i1="01" i2="1"><s1>BOONPENG (P.)</s1></fA11><fA11 i1="02" i2="1"><s1>JEVASUWAN (W.)</s1></fA11><fA11 i1="03" i2="1"><s1>NUNTAWONG (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>THAINOI (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>PANYAKEOW (S.)</s1></fA11><fA11 i1="06" i2="1"><s1>RATANATHAMMAPHAN (S.)</s1></fA11><fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1><s2>Bangkok 10330</s2><s3>THA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Klong Luang</s1><s2>Pathumthani 12120</s2><s3>THA</s3><sZ>3 aut.</sZ></fA14><fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1><s2>Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Hambourg</s1><s3>DEU</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Bochum</s1><s3>DEU</s3><sZ>3 aut.</sZ></fA15><fA20><s1>271-274</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000190370280670</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>21 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0330601</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The fabrication of self-assembled In<sub>x</sub>Ga<sub>1-x</sub>As nanostructures on GaAs(0 0 1 ) substrates grown by droplet epitaxy using molecular beam epitaxy is reported. The effect of In contents (0≤x≤0.2) for In<sub>x</sub>Ga<sub>1-x</sub> droplets on their shape, dimension, density, and depth profile was investigated. The concentric quantum double rings (CQDRs) are transformed into quantum rings (QRs) with squarelike nanoholes when In content is increased. The transformation mechanism is explained by the strain relaxation arguments. As In content increases, crystallization can occur not only from the outer periphery, but also from the inner periphery of the rings. This is confirmed by decrease in outer dimension and change in the hole profile along the [1 -10] direction. In addition, low density QRs with shallow nanoholes were found on the surface for In content of 0.2. The surface morphology of In<sub>x</sub>Ca<sub>1-x</sub>As nanostructures was examined by atomic force microscopy (AFM).</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A16D</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H65</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07Z</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A15H</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Anneau quantique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Quantum ring</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Anillo cuántico</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Epitaxie gouttelette</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Droplet epitaxy</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Epitaxia gotita</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Autoassemblage</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Self-assembly</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Nanostructure</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Nanostructures</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gouttelette</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Droplets</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Profil profondeur</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Depth profiles</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Relaxation contrainte</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Stress relaxation</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété mécanique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Mechanical properties</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Cristallisation</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Crystallization</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Direction cristallographique</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Crystallographic direction</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Dirección cristalográfica</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Morphologie surface</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Surface morphology</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>15</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InxGa1-xAs</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InGaAs</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>8116D</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>6865</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8115H</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>227</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1><s2>16</s2><s3>Berlin DEU</s3><s4>2010-08-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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